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1 of 15 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . ordering information bifet hbt ldmos v r e g 2 g n d g n d v c c 3 v r e g 3 1 2 3 4 5 1 7 1 6 1 5 1 4 1 3 2 4 2 3 2 2 2 1 v c c 2 g n d 7 v b i a s 8 g n d 9 g n d 1 0 t x i n 1 1 g n d v r e g 1 g n d 2 0 v t x g n d a n t g n d 6 v c c 1 1 2 p d o w n p d e t 1 8 r x 1 9 v r x g n d i n p u t m a t c h b i a s i n t e r s t a g e m a t c h i n t e r s t a g e m a t c h RFFM4200 3.3v to 5.0v, 2.4ghz to 2.5ghz high power front end module RFFM4200 is a 1 x 1 mimo module that is intently specified to address ieee 802.11b/g/n wifi 2.4ghz to 2.5ghz customer premises equipment (cpe) applica- tions. the module has an integrated three-stage linear power amplifier, tx har- monic filtering and spdt switch. the RFFM4200 has fully matched input and output for a 50 ? system and incorporates matching networks optimized for linear output power and efficiency. the RFFM4200 is housed in a 6mm x 6mm laminate. features ? 34db typical gain across frequency band ? p out = 25dbm <2.5% dynamic evm ? 2.4ghz to 2.5ghz frequency range ? 1 x 1 mimo architecture ? integrated three-stage pa, filtering and t/r switch ? integrated power detector ? high impedance control applications ? wifi ieee802.11b/g/n applications ? customer premises equipment (cpe) ? spread-spectrum and mmds systems ds121008 ? ? package: 6mm x 6mm laminate RFFM4200 3.3v to 5.0 v, 2.4ghz to 2.5ghz high power front end module RFFM4200sb 5 piece bag RFFM4200sq 25 piece bag RFFM4200sr 100 piece reel RFFM4200tr7 2500 piece reel RFFM4200pck-410 RFFM4200 evaluation board and 5 piece bag
2 of 15 RFFM4200 ds121008 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . absolute maximum ratings parameter rating unit supply voltage (rf applied) -0.5 to +5.25 v supply voltage (no rf applied) -0.5 to +6.0 v dc supply current 750 ma input rf power +10* dbm operating temperature -30 to +85 c storage temperature -40 to +150 c moisture sensitivity msl3 *maximum input power with a 50 ? load. parameter specification unit condition min. typ. max. typical conditions t=25c, v cc =5.0v, v reg =2.9v, using an ieee802.11g waveform, 54mbps, unless other- wise noted tx performance - 11g/n compliance with standard 802.11g/n frequency 2412 2484 mhz 802.11n output power 25 25.5 dbm 802.11n ht20 and ht40 mcs7 802.11n dynamic evm 2.5 3 % 802.11n output power 25.8 dbm at v cc = 5.25v; 802.11n ht20 and ht40 mcs7 802.11n dynamic evm 2.5 3 % 802.11n output power 25.5 26 dbm 802.11g 64qam 54mbps 802.11n dynamic evm 2.5 3 % second harmonic -47 -42 dbm/mhz 11n ht40 mcs0/7 at rated p out third harmonic -50 -42 dbm/mhz 11n ht40 mcs0/7 at rated p out tx performance - spectral mask 802.11b output power 27.5 dbm meet 802.11b 1mbps mask spec 802.11n output power 25 dbm meet 802.11n ht20/ht40 msc7 mask tx performance - generic gain 31.5 34 37 db at rated p out gain variation over temperature +/-2.5 db over temperature of -40c to +85c low gain mode - gain reduction 23 db drop in gain vs. high gain mode by setting v reg2 = 0v power detect range 0.125 2.3 v p out = 5dbm to 30dbm power detect voltage 1.45 v at rated p out input return loss - tx_in pin 10 15 db in specified frequency band output return loss at ant pin 6 8 db in specified frequency band operating current 435 500 ma at rated p out quiescent current 160 210 ma v cc = 5.0v, v reg = 2.9v, and rf = off pae (power added efficiency) 20 % at rated p out (pa only) i reg 4 8.5 ma in tx mode p down current - v reg supply 7 10 ma p down = 0v, v reg = 2.9v, v cc = 5v p down current - v cc supply 0.51map down = 0v, v reg = 2.9v, v cc = 5v leakage current 0.2 0.6 ma v cc = 5v, v reg = 0v, p down = 0v power supply - v cc 55.25v power supply - v reg1 , v reg2 , v reg3 2.8 2.9 3 v caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rfmd green: rohs compliant per eu directive 2002/95/ec, halogen free per iec 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a fl ame retardant, and <2% antimony in solder.
3 of 15 RFFM4200 ds121008 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . a parameter specification unit condition min. typ. max. typical conditions t=25c, v cc =5.0v, v reg =2.9v, using an ieee802.11g waveform, 54mbps, unless other- wise noted tx performance - generic (continued) turn-on time from setting of v reg values 400 nsec output stable to within 90% of final gain turn-off time from setting of v reg values 800 nsec output stable to within 90% of final gain stability -25 30 dbm no spurs above -45dbm into 4:1 vswr cw p1db 32 dbm tx mode in 50% duty cycle rx performance rx insertion loss - rx 0.8 1 db noise figure 0.8 1 db in specified frequency band return loss - rx 10 16 db rx to ant isolation while in tx mode 30 db rx to tx isolation while in tx mode 25 30 ma generic performance t/r switching time 0.5 ? s voltage logic high 2.75 2.9 3.4 v voltage logic low 0 0.3 v control current - logic high 1 10 ? a thermal r th_j 30 c/w esd human body model 500 v eia/jesd22-114a, rf pins 500 v eia/jesd22-114a, dc pins charge device model 750 v jesd22-c101c, all pins RFFM4200 truth table status pdown vtx vrx tx mode 110 rx mode 001 note: pdown and vtx can be tied together or controlled separately. if they are controlled separately, vtx should be ?on? before pdown in ?turn on?, and pdown should ?off? before vtx in ?turn off??
4 of 15 RFFM4200 ds121008 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . pin function description 1gnd ground connection. 2gnd ground connection. 3 vcc3 this pin is connected internally to the collector of the 3rd stage rf device. to achieve specified perfor- mance, the layout of these pins should match the recommended land pattern. 4 vcc2 this pin is connected internally to the collector of the 3rd stage rf device. to achieve specified perfor- mance, the layout of these pins should match the recommended land pattern. 5gnd ground connection. 6 vcc1 this pin is connected internally to the collector of the 3rd stage rf device. to achieve specified perfor- mance, the layout of these pins should match the recommended land pattern. 7vbias supply voltage for the bias reference and control circuits. 8gnd ground connection. 9gnd ground connection. 10 txin rf input is internally matched to 50 ? and dc blocked. 11 gnd ground connection. 12 pdown power down pin. apply <0.6v dc to power down the three power amplifier stages. apply 1.75v dc to 5.0v dc to power up. if function is not desired, pin may be connected to v reg . 13 vreg1 first stage bias voltage. this pin requires regulated supply for best performance. 14 vreg2 second stage bias voltage. this pin requires regulated supply for best performance. 15 vreg3 third stage bias voltage. this pin requires regulated supply for best performance. 16 pdet power detector provides an output voltage proportional to the rf output power level. 17 gnd ground connection. 18 rx rf output is internally matched to 50 ? and dc blocked. 19 vrx switch control for rx mode. 20 gnd ground connection. 21 ant rf output is internally matched to 50 ? and dc blocked. 22 gnd ground connection. 23 gnd ground connection. 24 vtx switch control for tx mode. pkg base gnd ground connection. the back side of the package should be connected to the ground plane through as short a connection as possible, e.g., pcb vias under the device are recommended.
5 of 15 RFFM4200 ds121008 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . theory of operation and applications the RFFM4200 is a single-chip integrated front-end module (fem ) for high performance wifi applications in the 2.4ghz to 2.5ghz ism band. the fem greatly reduces the number of external components minimizing footpr int and assembly cost of the overall 802.11b/g/n solution. the RFFM4200 has an integrated b/g/n power amplifier, a power detector, and tx filtering and a switch, which is capable of switching between wifi rx, wifi tx operations. the device is ma nufactured using ingap hbt and phemt processes on a 6mm x 6mm x 0.95mm la minate package. the module meets or exceeds the rf front-end needs of the 802.11b/g/n wifi rf systems. the RFFM4200 is a very easy part to implement. to reduce the design and optimization pro- cess on the customer application, the evaluation board layout shou ld be copied as close as possible, in particular the ground and via configurations. gerber files of rfmd pcba designs ca n be provided upon request. the supply voltage lines should present an rf short to the fem by using bypass capacitors on the v cc traces. to simplify bias conditions, the RFFM4200 requires a single positive supply voltage (v cc ), a positive current control bias (v reg ) supply, and a positive supply for switch con- trol. the built-in power detector of the RFFM4200 can be used as power monitor in the system. all inputs and outputs are inter- nally matched to 50 ? . transmit path the RFFM4200 has a typical gain of 34db form 2.4ghz to 2.5ghz, and delivers 25.5dbm typical output power in 11n ht20 mcs7 and 26dbm typical in 11g 54mbps. the RFFM4200 requires a single positive supply voltage of 5.0v to operate at full specifications. the v reg pin requires a regulated supply at 2.9v to maintain nominal bias current. out of band rejection the RFFM4200 contains a low pass filtering (lpf) to attenuate the 2nd harmonics to -47dbm/mhz (typical), to meet the out of band rejection requirements of the system for fcc specification. receive path the rx path has a 50 ? single-ended port. the receive port return loss is 9.6db minimum. in this mode, the fem has an inser- tion loss of 0.8db and 30db (typical) isolation to tx port. RFFM4200 biasing instructions to the evaluation board 802.11b/g/n transmit: 1. connect the fem to a signal generator at the input and a spectrum analyzer at the output. set the pin at signal generator is at -20dbm. 2. bias v cc to 5.0v first with v reg =0.0v. if available, enable the current limiting function of the power supply to 750ma. 3. refer to switch operational truth table to set the contro l lines at the proper levels for wifi tx.? turn on v reg to 2.9v (typ). on v reg (of evaluation board), a regulated supply is recommended . be extremely careful not to exceed 3.0v on the v reg pin or the part may exceed device current limits. 4. turn on pdown to 2.9v (typ). p down pin can be tied to v reg supply. note: it is important to adjust the v cc voltage source so that +5v is measured at the board; and the +2.9v of v reg is measured at the board. the high collector currents will drop the collector voltage significantly if long leads are used. adjust the bias voltage to compensate. 5. turn on rf of signal generator and gradually increase power level to the rated power. caution: if the input signal exceeds the rated power, the RFFM4200 evaluation board can be permanently damaged. 6. to turn off fem, turn off rf power of signal generator; then p down , v reg , and v cc . 802.11b/g/n receive: ? to receive wifi set the switch control lines per the truth table.
6 of 15 RFFM4200 ds121008 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . general layout guidelines and considerations for best performance the following layout guidelines and consid erations must be followed regardless of final use or configura- tion: 1. the ground pad of the RFFM4200 has special electrical and thermal grounding requirements. this pad is the main rf ground and main thermal conduit path for heat dissipation. th e gnd pad and vias pattern and size used on the rfmd eval- uation board should be replicated. the rfmd layout files in gerber format can be provided upon request. ground paths (under device) should be made as short as possible. 2. the rf lines should be well separated with solid ground in between the traces to eliminate any possible rf leakages or cross-talking. 3. bypass capacitors should be used on the dc supply lines. the v cc lines may be connected after the rf bypass and decou- pling capacitors to provide be tter isolation between each v cc line. RFFM4200 tx production and system calibration recommendation it?s highly recommended to follow the dc biasing step and rf power settings in the production calibration or test: 1. connect the rf cables of input and output then connect to the proper equipment. 2. apply v cc , then vreg as per the data sheet recommendations. 3. set rf input to the desired frequency and initial rf input powe r at -20dbm. this will insure the power amplifier is in a line ar state and not over driven. 4. set fem in tx mode by the truth table. 5. apply pdown = high 6. sweep rf from low to high output power and take measurements at the rated output power. 7. insure that the output power at turn on doesn?t saturate the power amplifier. the recommended output power should be about 10db to 20db below the rated power. start calibrating from low to high power in reasonable steps until the rated power is reached then take the measurements. caution: if the input signal exceed s the maximum input power specifica- tions, the RFFM4200 could be permanently damaged.
7 of 15 RFFM4200 ds121008 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . package drawing note: thermal vias for center slug ?b? should be incorporated into the pcb design. the number and size of thermal vias will depend on the application. example of th e number and size of vias can be foun d on the rfmd evaluation board layout. pcb metal land pattern 0.000 2x 0.900 2x 1.800 7x 2.700 2x 0.900 2x 1.800 7x 2.700 7x 2.700 2x 1.800 2x 0.900 7x 2.700 2x 1.800 2x 0.900 0.000 a = 0.400 x 0.400 mm b = 4.400 x 4.400 mm a a a a a a a a a a a a a b a a a a a a a a a a a 20x 0.300 pcb stencil pattern a a a a a a a a a a a a a b a a a a a a a a a a a 7x 2.700 2x 1.800 2x 0.900 0.000 2x 0.900 2x 1.800 7x 2.700 7x 2.700 2x 1.800 2x 0.900 2x 0.900 2x 1.800 7x 2.700 3x 1.550 3x 1.550 3x 1.550 3x 1.550 a = 0.360 x 0360 mm b = 1.170 x 1.179 mm 20x 0.385 b b b b b b b b 0.000 notes n o t e s : 1. shaded area represents pin 1 location 1 . s h a d e d a r e a r e p r e s e n t s p i n 1 l o c a t i o n pcb solder mask pattern a a a a a a a a a a a a a b a a a a aa a a a a a a = 0.550 x 0.550 mm b = 4.550 x 4.550 mm 0.000 2x 0.900 2x 1.800 7x 2.700 2x 0.900 2x 1.800 7x 2.700 7x 2.700 2x 1.800 2x 0.900 7x 2.700 2x 1.800 2x 0.900 0.000 20x 0.150
8 of 15 RFFM4200 ds121008 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . pin out v r e g 2 g n d g n d v c c 3 v r e g 3 1 2 3 4 5 1 7 1 6 1 5 1 4 1 3 2 4 2 3 2 2 2 1 v c c 2 g n d 7 v b i a s 8 g n d 9 g n d 1 0 t x i n 1 1 g n d v r e g 1 g n d 2 0 v t x g n d a n t g n d 6 v c c 1 1 2 p d o w n p d e t 1 8 r x 1 9 v r x g n d
9 of 15 RFFM4200 ds121008 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . RFFM4200 evaluation board top layer RFFM4200 evaluation board bottom layer
10 of 15 RFFM4200 ds121008 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board schematic j1 ant pdet vreg r2 ?? j3 txin c3 10uf vcc p1 1 2 3 4 hdr_1x4 vcc p2 hdr_1x7 1 2 3 4 5 6 7 vreg vreg2 c4 1uf 1 2 3 4 5 1 7 1 6 1 5 1 4 1 3 2 4 2 3 2 2 2 1 7 8 9 1 0 1 1 2 0 6 1 2 1 8 1 9 RFFM4200 r1 20k ? pdown j2 rx vtx vrx pdet pdown c1 1000pf vtx vrx c2 dnp vreg2 r3 dnp r4 0 ? r4, r5 are option for higher vcc. it can be removed at vcc = 5v operation r5 0 ?
11 of 15 RFFM4200 ds121008 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board bill of materials (bom) description qty reference designator manufacturer manufacturer?s p/n cap, 1000pf, 10% 50v, x7r,0402 1 c1 murata electronics grm155r71h102ka01d cap, 1 ? f, 10%, 10v, x5r, 0603 1 c4 murata electronics grm188r61a105ka61d cap, 10 ? f, 10%, 10v, x5r, 0805 1 c3 murata electronics rm21br61a106ke19l conn, sma, end launch, univ, hyb mnt, flt 3 j1, j2, j3 molex sd-73251-4000 res, 20k ???????????? w ?? 0402 1 r1 panasonic indu strial co erj-2ge-j203 res, 0 ? , 0402 3 r2, r4, r5 kamaya, inc rmc1/16sjpth dni 2 r3, c2 RFFM4200 1 u1 rfmd RFFM4200
12 of 15 RFFM4200 ds121008 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance wifi 802.11n ht20 mcs7 performance plots in 100% duty cycle 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 e v m ( % ) output power (dbm) evm(%) vs. pout(dbm) - 40 c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 e v m ( % ) output power (dbm) evm(%) vs. pout(dbm) 25 c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 e v m ( % ) output power (dbm) evm(%) vs. pout(dbm) 85 c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0 2 4 6 8 1012141618202224262830 i c c ( a ) output power (dbm) icc(a) vs. pout(dbm) - 40 c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0 2 4 6 8 1012141618202224262830 i c c ( a ) output power (dbm) icc(a) vs. pout(dbm) 25 c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0 2 4 6 8 1012141618202224262830 i c c ( a ) output power (dbm) icc(a) vs. pout(dbm) 85 c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz
13 of 15 RFFM4200 ds121008 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 g a i n ( d b ) output power (dbm) gain(db) vs. pout(dbm) -40c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 g a i n ( d b ) output power (dbm) gain(db) vs. pout(dbm) 25 c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 g a i n ( d b ) output power (dbm) gain(db) vs. pout(dbm) 85 c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 p d e t ( v ) output power (dbm) power detect (v) vs. pout(dbm) - 40 c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 p d e t ( v ) output power (dbm) power detect (v) vs. pout(dbm) 25 c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 p d e t ( v ) output power (dbm) power detect (v) vs. pout(dbm) 85 c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz
14 of 15 RFFM4200 ds121008 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance wifi 802.11n ht20 mcs7 performance plots in 50% duty cycle 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 024681012141618202224262830 e v m ( % ) output power (dbm) evm(%) vs. pout(dbm) -40c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 024681012141618202224262830 e v m ( % ) output power (dbm) evm(%) vs. pout(dbm) 25 c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 024681012141618202224262830 e v m ( % ) output power (dbm) evm(%) vs. pout(dbm) 85 c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0 2 4 6 8 1012141618202224262830 i c c ( a ) output power (dbm) icc(a) vs. pout(dbm) -40c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0 2 4 6 8 1012141618202224262830 i c c ( a ) output power (dbm) icc(a) vs. pout(dbm) 25 c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 0 2 4 6 8 1012141618202224262830 i c c ( a ) output power (dbm) icc(a) vs. pout(dbm) 85 c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz
15 of 15 RFFM4200 ds121008 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 024681012141618202224262830 g a i n ( d b ) output power (dbm) gain(db) vs. pout(dbm) - 40 c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 024681012141618202224262830 g a i n ( d b ) output power (dbm) gain(db) vs. pout(dbm) 25 c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 024681012141618202224262830 g a i n ( d b ) output power (dbm) gain(db) vs. pout(dbm) 85 c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 024681012141618202224262830 p d e t ( v ) output power (dbm) power detect (v) vs. pout(dbm) -40c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 024681012141618202224262830 p d e t ( v ) output power (dbm) power detect (v) vs. pout(dbm) 25 c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 024681012141618202224262830 p d e t ( v ) output power (dbm) power detect (v) vs. pout(dbm) 85 c vcc=5vdc vreg=2.9vdc 2412mhz 2450mhz 2484mhz

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